Highly Efficient GaN Doherty Power Amplifier for N78 Sub-6 GHz Band 5G Applications

In this paper, a high-efficiency GaN Doherty power amplifier (DPA) for 5G applications in the N78 sub-6 GHz band is introduced. The theoretical analysis of matching networks peak and carrier transistors presented, with focus on impact unequal splitting both recommendation post-harmonic suppression network. proposed design features an Wilkinson divider at input network output, which are crucial achieving high efficiency. comprises two 10 W HEMTs, measured across 3.3 to 3.8 (the band), results reveal significant improvements gain, output power, drain efficiency, power-added Specifically, achieved gain over 12 dB 42 dBm saturated power. It also efficiency 80% saturation 75.2%. Furthermore, harmonic effectively attenuated harmonics from second fourth order more than −50 dB, thus enhancing device’s linearity.